| PART |
Description |
Maker |
| AT52BR1674T-85CI AT52BR1672 AT52BR1672-85CI AT52BR |
From old datasheet system
16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
|
ATMEL[ATMEL Corporation]
|
| S29GL032A100BFIR10 S29GL032A100TFIR10 S29GL032A100 |
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 64兆，32兆和16兆位3.0伏只页面模式闪存，含00纳米MirrorBit工艺技
|
Spansion Inc.
Spansion, Inc.
|
| S29CD016G0JQFA212 S29CD032G0MFAA102 S29CD016G0MQAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION
|
| S29CD016G0JFAA002 S29CD016G0JFAA012 S29CD016G0JFAA |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
|
| AT28C010 AT28C010-12 AT28C010-12DM_883 AT28C010-15 |
1 Megabit 128K x 8 Paged CMOS E2PROM
1 Megabit (128K x 8)
From old datasheet system
|
ATMEL[ATMEL Corporation]
|
| EN29F002 EN29F002N EN29F002T-70J EN29F002T-90TI EN |
2 Megabit (256K x 8-bit) Flash Memory
2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V -10% for both read/write operation. With RESET function.
|
Eon Silicon Solution
N.A.
ETC[ETC]
|
| AM29LV160 AM29LV160BB70RSEB AM29LV160BB70REEB AM29 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
6800uF 100WV 20% *NO Pb*
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 70 ns, PDSO48
VARISTOR METAL-OXIDE 150V RAD.3 10MM-DIA BULK 2M X 8 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2M X 8 FLASH 3V PROM, 90 ns, PDSO44
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
http://
|
| AT49BV001A AT49BV001A-55JI AT49BV001A-55TI AT49BV0 |
128K x 8 (1M bit), 2.7-Volt Read and Write, Top or Bottom Boot Parametric Block Flash.
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory
1-MEGABIT (128K X 8) SINGLE 2.7-VOLT BATTERY-VOLTAGE⒙ FLASH MEMORY
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AC 12C 12#12 SKT RECP
JT 100C 100#22D SKT RECP
AT49BV001A(N)(T) [Updated 9/03. 18 Pages] 128K x 8 (1M bit). 2.7-Volt Read and Write. Top or Bottom Boot Parametric Block Flash.
AC 6C 3#16 3#4 SKT RECP
Circular Connector; No. of Contacts:55; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 1兆位128K的8）单2.7伏电池电压⑩闪存
1-megabit (128K x 8) Single 2.7-volt Battery-VoltageFlash Memory 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32
1-megabit (128K x 8) Single 2.7-volt Battery-Voltage??Flash Memory
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| EN71NS128C0 EN71NS128C0-7DCWP |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
